摘要
We study the transport property of single C60 molecular transistors with special focus on the situation that other molecules are in vicinity.The devices are prepared using electromigration and thermal deposition techniques.Pure single C60 molecule transistors show typical coulomb blockade behavior at low temperature.When we increase the coverage of molecules slightly by extending the deposition time,the transport spectrum of devices displays a switching behavior in the general coulomb blockade pattern.We attribute this unconventional phenomenon to the influence from a nearby C60 molecule.By analyzing this transport behavior quantitatively based on the parallel-double-quantum-dot model,the interaction from the nearby molecule is proved to be of capacity and tunneling coupling.Thermal stimulation is also applied to the device to investigate the effect of local charging environment variation on intermolecular interaction.
We study the transport property of single C60 molecular transistors with special focus on the situation that other molecules are in vicinity. The devices are prepared using electromigration and thermal deposition techniques. Pure single C60 molecule transistors show typical coulomb blockade behavior at low temperature. When we increase the coverage of molecules slightly by extending the deposition time, the transport spectrum of devices displays a switching behavior in the general coulomb blockade pattern. We attribute this unconventional phenomenon to the influence from a nearby C60 molecule. By analyzing this transport behavior quantitatively based on the parallel-double-quantum-dot model, the interaction from the nearby molecule is proved to be of capacity and tunneling coupling. Thermal stimulation is also applied to the device to investigate the effect of local charging environment variation on intermolecular interaction.
作者
Xiao Guo
Wen-jie Liang
郭潇;梁文杰(Beijing National Center for Condensed Matter Physics,Bejjing Key Laboratory for Nanomaterials and Nanodevices,Institute of Physics,Chinese Academy of Sciences,Beijing 100190;CAS Center of Excellence in Topological Quantum Computation and School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100190;Songshan Lake Materials Laboratory,Dongguan 523808)
基金
Supported by the National Key R&D Program of China(2016YFA0200800)
the Strategic Priority Research Program of Chinese Academy of Sciences under Grant Nos XDB30000000 and XDB07030100
the Sinopec Innovation Scheme(A-381)
the Rise-Sinopec Fund(No 10010104-18-ZC0609-0003)
