摘要
基于0.5μm CMOS工艺,设计了一种采用新颖分段曲率补偿技术的低温漂带隙基准源,利用2种不同的电流补偿结构,分别在中温和高温阶段引入正温度系数补偿电流,使得基准电压的温度特性曲线在中温和高温阶段各产生2个新的极值点,与一般的分段曲率补偿带隙基准相比,提高了补偿效率。利用Cadence软件对电路进行设计与仿真,仿真结果表明,在-40~190℃温度范围内,输入电压为5 V时,输出基准电压为1.231 V,温漂系数为0.885 ppm/℃,低频时电源抑制比(PSRR)为-75^-109 dB。
Based on the 0.5μm CMOS process,a low-temperature drift bandgap reference source with novel segmentation curvature compensation technology is designed.Two different current compensation structures are adopted to introduce positive temperature coefficient compensation currents in the middle and high temperature phases respectively,so that the temperature characteristic curve of the reference voltage generates two new extreme points in the middle temperature and high temperature phases.Compared with the traditional segmented curvature compensation bandgap reference,the compensation efficiency is improved.The circuit is designed and simulated by Cadence.The simulation results show that when the input voltage is 5 V in-40-190°C,the output reference voltage is 1.231 V,the temperature drift coefficient is 0.885 ppm/°C,and the Power Supply Rejection Ratio(PSRR)is-75-109 dB at low frequency.
作者
程伟杰
曾以成
邓庭
CHENG Weijie;ZENG Yicheng;DENG Ting(Department of Microelectronics Science and Engineering,Xiangtan University,Xiangtan Hunan 411105,China)
出处
《太赫兹科学与电子信息学报》
北大核心
2019年第6期1118-1122,共5页
Journal of Terahertz Science and Electronic Information Technology
关键词
带隙基准电压源
温度系数
曲率补偿
电源抑制比
bandgap reference voltage source
temperature coefficient
curvature compensation
Power Supply Rejection Ratio