单晶硅同质互抛实验研究

Experimental Study on Homogeneity Mutual Polishing of Monocrystalline Silicon

以材料的去除率和表面粗糙度为评价指标设计对比实验,验证了硬脆材料互抛抛光的可行性,得到了抛光盘转速对硬脆材料互抛的影响趋势和大小。实验结果表明:当抛光压力为48265 Pa(7 psi)、抛光盘转速为70 r/min时,自配抛光液互抛的材料去除率为672.1 nm/min,表面粗糙度为4.9 nm,与传统化学机械抛光方式的抛光效果相近,验证了硬脆材料同质互抛方式是完全可行的;互抛抛光液中可不添加磨料,这改进了传统抛光液的成分;采用抛光液互抛时,材料去除率随着抛光盘转速的增大呈现先增大后减小的趋势,硅片的表面粗糙度随着抛光盘转速的增大呈先减小后增大的趋势。

The material removal rate and surface roughness were used as evaluation indexes to design comparison experiments,which was used to verify the feasibility of the mutual polishing of hard and brittle materials,and the influence trends and degrees of the polishing pad speeds on the mutual polishing were obtained.The experimental results show that when the polishing pressure is as 48265 Pa(7 psi),the polishing pad speed is as 70 r/min,the material removal rate of the mutual polishing with self-dispensing polishing slurry is as 672.1 nm/min,and the surface roughness is as 4.9 nm.It is similar to the polishing effectiveness of traditional CMP method,which proves that the method of homogeneity mutual polishing for hard and brittle materials is completely feasible.The polishing slurry may be made without abrasive,which improves the composition of traditional polishing slurry.When the polishing slurry is used for mutual polishing,the material removal rates firstly increase and then decrease with the increasing of the polishing pad speeds.The surface roughnesses of the silicon wafer firstly decrease and then increase as the polishing pad speeds increase.