新型CMOS温度传感器的设计

New Design of CMOS Temperature Sensor

文中设计的温度传感器芯片采用UMC 0.18μm 1P6M工艺,基于PTAT电流源的两个双极性晶体管的基极与发射结之间电压的温度特性,利用输出端处理电路进一步提高精度。针对增益不足采用偏置电路,针对相位失调采用米勒补偿结构,针对人体温度范围所需精度要求采用输出端缓冲再放大结构。芯片工作电压为1.8 V,电源抑制比为-82 dB,直流功耗72μW,可测范围-40~125℃,体温范围以内精度更高,输出电压步长2.65 mV/℃,输出精度为0.01℃。流片之后进行了系统测试,测试结果表明,输出电压与温度具有非常高的线性度,并且在体温范围内具有极高的精度。

The temperature sensor chip proposed in this work adopted the process of UMC 0.18μm 1P6M,which was based on the temperature characteristic of the voltage between the base and the emitter junction of two bipolar transistors belonging to the PTAT current source,and further improved the accuracy by using the output processing circuit.In this paper,the bias circuit was used for the lack of gain,and the Miller compensation structure was adopted for the phase offset.The output buffer was used to re-amplify the structure for the accuracy requirement of the human body temperature range.The operating voltage for the ship was 1.8 V,supply rejection ratio for the power was-82 dB,power consumption for the DC was 72μW,the measurable range was-40℃to 125℃,accuracy was higher within the temperature range,the output voltage step was 2.65 mV/℃,and the output accuracy is 0.01℃.A system test was carried out after fabricating,showing high linearity between output voltage and temperature,and extremely accurate in the body temperature range.