铁电负电容场效应晶体管器件的研究

Research on Ferroelectric Negative Capacitor Field Effect Transistor Devices

铁电负电容场效应晶体管作为一种新型半导体器件,利用铁电材料的负电容效应可使晶体管的亚阈值摆幅突破理论极限值60 mV/dec,是未来低功耗晶体管领域最具有前途的器件之一。该文研究并建立了铁电负电容场效应晶体管的器件模型,采用Matlab软件对负电容场效应晶体管的器件特性进行了研究分析,获得了亚阈值摆幅为33.9176 mV/dec的负电容场效应晶体管的器件结构,探究了铁电层厚度、等效栅氧化层厚度及不同铁电材料对负电容场效应晶体管亚阈值摆幅的影响。

As a new semiconductor device,the negative capacitance Field Effect Transistor(NCFET)which can break the theoretical limit of the sub-threshold swing of 60 mV/dec by using the negative capacitance effect of ferroelectric materials is one of the most promising devices in the field of low power transistors.In this paper,the device model of NCFET is studied and established.The structure of NCFET with sub-threshold swing of 33.9176 mV/dec is obtained by using the Matlab software to analyze the features of CNFETs.The influences of the different thickness of ferroelectric layer,the different thickness of equivalent gate oxide layer and the different ferroelectric materials on the sub-threshold swing of NCFET are investigated systematically.