垂直腔面发射半导体激光器腔模位置对器件输出波长的影响研究

Influence of Cavity Mode on Lasing Wavelength of VCSEL

为得到高温环境下894. 6 nm稳定波长激光输出的垂直腔面发射半导体激光器(VCSEL),设计并制备了腔模位置不同的VCSEL芯片;通过对VCSEL腔模位置、输出波长和温漂系数的测试分析,研究了腔模位置对器件输出波长的影响,发现腔模位置与输出波长具有线性对应关系。设计了腔模位置在890.5 nm的VCSEL外延片结构,经工艺制备得到了85℃高温环境下894.6 nm稳定波长激光输出的VCSEL芯片。实验结果表明,通过调控腔模位置可得到目标波长激光输出的VCSEL芯片,该研究为研制其他波段稳定波长激光输出的垂直腔面发射激光器奠定了基础。

The chips of vertical cavity surface emitting laser( VCSEL) with different positions of cavity mode were designed and prepared for 894. 6 nm VCSEL with wavelength-stabilized output in high temperature environment. The influence of cavity mode position on lasing wavelength is studied by testing and analyzing the cavity mode position,output wavelength and temperature drift coefficient of VCSEL. It is found that the lasing wavelength of VCSEL has a linear relation with cavity mode. A structure of VCSEL with cavity mode at 890. 5 nm was designed. VCSEL chips which output wavelength is 894. 6 nm in 85 ℃high temperature environment were prepared. The results show that the desired output wavelength of VCSEL chips can be obtained by controlling the position of cavity mode.