化学气相沉积法制备氧化镓纳米线

Preparation of Ga2O3 Nanowires by Chemical Vapor Deposition

β-Ga2O3纳米线是一种新型具有强发光特性的宽带隙半导体材料,作为探测器性能稳定且可靠,近年来受到了极大的关注。本文主要采用化学气相沉积法(CVD),以Ag纳米颗粒为催化剂,在Si(100)衬底上生长了β-Ga2O3纳米线,经EDS、SEM、TEM等技术表征,证明其大部分遵循VLS生长机理,少许遵循VS机制。其中遵循VLS生长机制的β-Ga2O3纳米线更细更长,其形貌均匀一致,长度约为230~260μm,直径约为150~180 nm,且Ag颗粒皆在纳米线顶部。

β-Ga2O3 nanowires,as a new type of wide band gap semiconductor material,have strong luminescent properties.Due to the stable and reliable performance of detectors,it has attracted great attention in recent years.In this paper,β-Ga2O3 nanowires were grown on Si(100)substrate by chemical vapor deposition(CVD)with Ag nanoparticles as catalyst.The results of EDS,SEM and TEM showed that most of them follow VLS growth mechanism and some follow the VS.Among them,β-Ga2O3 nanowires,which follow the VLS growth mechanism,are thinner and longer,the morphology ofβ-Ga2O3 nanowires was uniform with length 230-260μm,diameter 150-180 nm and Ag particles were all on the top of nanowire.