摘要
Prof.Zhanguo Wang,a world-famous semiconductor materials physicist,was born on December 29,1938,in Zhenping County,Henan Province,China.After graduating from the Department of Physics,Nankai University in 1962,he joined the Institute of Semiconductors,Chinese Academy of Sciences,until now.Prof.Wang has made outstanding achievements in the field of semiconductor materials and material physics.He has engaged in the study of the irradiation effect of silicon solar cells used in artificial satellites and the devices/modules in nuclear transient irradiation in his early career,which significantly contributed to the realization of atomic/hydrogen bombs and artificial satellites in China.Prof.Wang joined the Department of Solid State Physics,the University of Lund,from 1980 to 1983,where he worked on deep energy level physics and photoluminescence studies of semiconductors.He and collaborators developed a new method to identify whether the two-deep levels within a bandgap are coupled,thus solving the longexisting argument for the nature of gold-related donors and acceptors in silicon and A and B deep levels in liquid phase epitaxy grown GaAs.
