退火温度对（STO/YSZ/GDC）4超晶格电解质薄膜的影响

Inflence of Annealing Temperature on the （STO/YSZ/GDC）4 Superlattice Electrolyte Film

采用脉冲激光沉积技术(PLD),在Al2O3单晶基底上交替沉积SrTiO3(STO)、8%(摩尔分数)Y2O3掺杂ZrO2(YSZ)和Ce0.9Gd0.1O2-δ(GDC),制备出四种不同退火温度的超晶格电解质薄膜。利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X-荧光光谱仪和射频阻抗材料分析仪对不同退火温度下的样品进行形貌、元素组成和电学性能测试。结果表明,随着退火温度的升高,薄膜的外延生长更为良好,晶粒的均匀性和致密性得到改善,薄膜和基底的结合变的紧密、清晰。(STO/YSZ/GDC)4超晶格电解质薄膜在退火温度为800℃时电导率最大。

Four kinds of(SDC/YSZ)Nsuperlattice electrolytic films with different annealing temperature were fabricated on single crystal Al2O3 substrates by pulsed laser sputtering method. The morphology,elemental composition and electrical properties of the samples with different annealing temperatures were studied through electron microscopy(SEM),transmission electron microscopy(TEM),X-ray fluorescence spectrometer and alternating current(AC) impedance spectroscopy. The results showed that with increase of annealing temperature,the uniformity and tightness of the grains were improved,the films combined with the substrate were more tightly and clearly,and the epitaxial growth of the films became better.(STO/YSZ/GDC)4 superlattice electrolyte film had the highest conductivity when annealing temperature reached 800 ℃.