铪基铁电薄膜及其隧道结存储器件研究

Hafnium Based Ferroelectric Material and Ferroelectric Tunnel Junction Memery Devices

在信息技术高度发达的今天,传统的信息存储技术正面临着诸多挑战,铁电隧道结等新兴存储器受到了越来越广泛的关注.基于氧化铪材料的铁电隧道结存储器具有读写快、能耗低、与传统CMOS工艺兼容等优势.该文制备了两种底电极的铪锆氧铁电隧道结,测试其铁电特性和存储性能.其中采用铂为底电极的铪锆氧铁电隧道结不仅有较高的剩余极化强度和优秀的疲劳特性,并且在编程速度和响应时间上优于传统的铁电材料,展现出良好的应用前景.

Nowadays,with the highly developed information technology,traditional information storage technology is facing many challenges,and next-generation memory candidates such as ferroelectric tunnel junction(FTJ)has attracted extensive attention.Ferroelectric tunnel junction based on hafnium zirconium oxide(Hf0.5Zr0.5O 2)material has the advantages of fast reading and writing,low energy consumption and compatibility with traditional CMOS technology.In this paper we fabricated and characterized ferroelectric tunnel junction based on Hf0.5Zr0.5O2 films using highly doped Si and Pt as Bottom electrode.The results show Pt-Hf0.5Zr0.5O2-Au structure FTJ not only has high residual polarization strength and excellent fatigue characteristics,but also has better programming speed and response time compare to traditional ferroelectric materials.These excellent properties make Hf0.5Zr0.5O2 FTJ have a broad application prospective.