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显微红外测温中功率器件的边缘效应及其修正

Edge Effect of Power Devices and the Correction in the Infrared Micro-Thermography
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摘要 针对显微红外热成像中对功率器件进行测温时边缘效应引起的测温误差,提出了采用精密位置调节装置进行修正的方法。分析了显微红外测温中边缘效应产生的原因,认为热膨胀等因素造成了被测功率器件表面两种不同发射率的材料与显微红外热像仪相对位置发生改变,并在两种材料的边缘区域导致明显的测温误差。在理论分析的基础上提出了判断被测件与显微红外热像仪相对位置改变方向的方法,并用显微红外热像仪进行了实验验证。根据被测件表面不同材料的发射率以及测温误差的正负可以判断被测件位置改变的方向,采用精密位移装置补偿这一位置改变即可有效消除边缘效应引起的测温误差。 Aiming at the temperature measurement errors caused by the edge effect of power devices in infrared micro-thermography,a correction method using a precise position-adjusting implement was proposed.The causes of the edge effect in the infrared micro-thermography were analyzed.It is considered that thermal expansions or other factors caused the relative position change of two kinds of materials with different emissivity on the surface of the measured power device and the infrared microscope,which made apparent errors near the edge region of the two mateials.Based on the theoretical analysis,the way to determine the direction of the relative position change of the device under test(DUT)and the infrared microscope was proposed,and was validated using an infrared microscope.According to the emissivity of different materials on the surface of the DUT and positive or negative values of temperature measurement errors,the position change direction of the DUT was determined.Using a precise position-adjusting implement to compensate the position change can effectively eliminate the temperature measurement errors caused by the edge effect.
作者 邹学锋 丁立强 翟玉卫 刘岩 梁法国 李灏 Zou Xuefeng;Ding Liqiang;Zhai Yuwei;Liu Yan;Liang Faguo;Li Hao(The 13th Research Institute,CETC,Shijiazhuang 050051,China)
出处 《半导体技术》 CAS 北大核心 2019年第12期983-988,共6页 Semiconductor Technology
关键词 显微红外热成像 边缘效应 发射率 位移 测温误差 功率器件 infrared micro-thermography edge effect emissivity displacement temperature measurement error power device
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  • 1李国华,吴立新,吴淼,曲敬信.红外热像技术及其应用的研究进展[J].红外与激光工程,2004,33(3):227-230. 被引量:95
  • 2梁军利,杨树元,唐志峰.基于随机共振的微弱信号检测[J].电子与信息学报,2006,28(6):1068-1072. 被引量:27
  • 3侯成刚,张广明,赵明涛,屈梁生.用红外热成像技术精确测定物体发射率[J].红外与毫米波学报,1997,16(3):193-198. 被引量:26
  • 4高光勃,李学信.半导体器件可靠性物理[M].科学出版社,1987,11.
  • 5A. R. Hefner, D. L Blackburn. Simulating the dynamic electrothermal behavior of power electronic circuits and systems[J]. IEEE Transactions on Power Electronics, 1993, 8(4):376-385
  • 6D. L Blackburn Temperature measurements of semiconductor devices-a review[C]. 20^th SEMI-THERM Symposium, San Jose, USA, 2004:70-80
  • 7沈学础.半导体光谱和光学性质(第二版)[M].科学出版社,2003,7
  • 8D. D. Griffin. Infrared techniques for measuring temperature and related phenomena of microcircuits [J]. Appl, Opt,, 1968, 7(9):1749-1755
  • 9Andre A, Jaecklin, Alois Marek. Instantaneous temperature profiles inside semiconductor power devices: Part Ⅰ [J]. IEEE Transaction on Electron Devices, 1974, ED-21(1):50-53
  • 10T. W. Joseph, A. L. Berry, B. Bossman. Infrared laser microscopy of structures on heavily doped silicon [C]. ISTFA 92: The 18th International Symposium for Testing & Failure Analysis, Oct, 1992:1-7

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