摘要
A single-wall carbon nanotube(SWCNT)has superior optical,electrical,and mechanical properties due to its unique structure and is therefore expected to be able to form flexible high-performance transparent conductive films(TCFs).However,the optoelectronic performance of these films needs to be improved to meet the requirements of many devices.The electrical resistivity of SWCNTTCFs is mainly determined by the intrinsic resistivity of individual SWCNTs and their junction resistance in networks.We analyze these key factors and focus on the optimization of SWCNTs and their networks,which include the diameter,length,crystallinity and electrical type of the SWCNTs,and the bundle size and interconnects in networks,as well as chemical doping and microgrid design.We conclude that isolated/small-bundle,heavily doped metallic or semiconducting SWCNTs with a large diameter,long length and high crystallinity are necessary to fabricate high-performance SWCNTTCFs.A simple,controllable way to construct macroscopic SWCNT networks with Y-type connections,welded junctions or microgrid design is important in achieving a low resistivity.Finally,some insights into the key challenges in the manufacture and use of SWCNT TCFs and their prospects are presented,hoping to shed light on promoting the practical application of SWCNT TCFs in future flexible and stretchable optoelectronics.
A single-wall carbon nanotube(SWCNT) has superior optical,electrical,and mechanical properties due to its unique structure and is therefore expected to be able to form flexible high-performance transparent conductive films(TCFs).However,the optoelectronic performance of these films needs to be improved to meet the requirements of many devices.The electrical resistivity of SWCNTTCFs is mainly determined by the intrinsic resistivity of individual SWCNTs and their junction resistance in networks.We analyze these key factors and focus on the optimization of SWCNTs and their networks,which include the diameter,length,crystallinity and electrical type of the SWCNTs,and the bundle size and interconnects in networks,as well as chemical doping and microgrid design.We conclude that isolated/small-bundle,heavily doped metallic or semiconducting SWCNTs with a large diameter,long length and high crystallinity are necessary to fabricate high-performance SWCNTTCFs.A simple,controllable way to construct macroscopic SWCNT networks with Y-type connections,welded junctions or microgrid design is important in achieving a low resistivity.Finally,some insights into the key challenges in the manufacture and use of SWCNT TCFs and their prospects are presented,hoping to shed light on promoting the practical application of SWCNT TCFs in future flexible and stretchable optoelectronics.
基金
financially supported by the Ministry of Science and Technology of China (Grant No.2016YFA0200101)
the National Natural Science Foundation of China (Grant Nos.51625203,51532008,51572264,51772303,51761135122, 51872293)
the Chinese Academy of Sciences (Grant No. 174321KYSB20160011)