0.2THz二倍频器研究

Research of 0.2 THz doubler multiplier

基于六阳极结反向串联型GaAs平面肖特基二极管,设计并实现了0.2 THz大功率二倍频器。肖特基二极管倒装焊接在50μm石英电路上。采用电磁场和电路联合设计仿真获得了二倍频器的倍频效率。当入射功率在100 mW时,输出频率在190~225 GHz带内效率大于5%。在小功率(Pin≈100 mW)和大功率(Pin≈300 mW)注入条件下,测试了倍频电路的输出功率和倍频效率。在100 mW驱动功率下采用自偏压测试,最大输出功率为14.5 mW@193 GHz,对应倍频效率为14%;在300mW驱动功率下采用自偏压测试,在188~195 GHz,输出功率大于10mW,最大输出功率为35 mW@192.8 GHz,对应倍频效率为11%。

A 0.2 THz high power doubler multiplier was designed and realized based on six anodes in parallel-series GaAs planar Schottky diodes.The Schottky diode was flip-chiped on the 50μm thick quartz.The efficiency of the circuit was simulated combined of EM simulator and circuit simulator.The measured efficiency was bigger than 5%over the band of 190 GHz to 225 GHz with the input power of 100 mW.The circuit output power and efficiency were measured under the condition of small and large input power as 100 mW and 300 mW.The peak efficiency was 14%at the frequency of 193 GHz and the maximum output power was 14.5 mW with the input power of 100 mW under the self-biased condition.The measured output power was bigger than 10 mW over the band of 188 GHz to 195 GHz with the input power of 300 mW under the self-biased condition.The peak output power was 35 mW at the frequency of 192.8 GHz and the multiplier efficiency was 11%.