摘要
Deep-level defects in silicon carbide(SiC)are critical to the control of the performance of SiC electron devices.In this paper,deep-level defects in aluminumion-implanted 4H-SiC after high-temperature annealingwere studied using electron paramagnetic resonance(EPR)spectroscopy at temperatures of 77 K and 123 K under different illumination conditions.Results showed that the main defect in aluminum ion-implanted 4H-SiC was the positively charged carbon vacancy(VC+),and the higher the doping concentration was,the higher was the concentration of VC+.Itwas found that the type of material defectwas independent of the doping concentration,although more VC+defects were detected during photoexcitation and at lower temperatures.These results should be helpful in the fundamental research of p-type 4H-SiC fabrication in accordance with functional device development.
Deep-level defects in silicon carbide(SiC) are critical to the control of the performance of SiC electron devices. In this paper, deep-level defects in aluminum ion-implanted 4 H-SiC after high-temperature annealing were studied using electron paramagnetic resonance(EPR) spectroscopy at temperatures of 77 K and 123 K under different illumination conditions. Results showed that the main defect in aluminum ion-implanted 4 H-SiC was the positively charged carbon vacancy( VC^+), and the higher the doping concentration was, the higher was the concentration of VC^+. It was found that the type of material defect was independent of the doping concentration,although more VC^+ defects were detected during photoexcitation and at lower temperatures. These results should be helpful in the fundamental research of p-type 4 H-SiC fabrication in accordance with functional device development.
基金
supported by the National Natural Science Foundation of China (No. 51575389, 51761135106)
the National Key Research and Development Program of China (2016YFB1102203)
the State Key Laboratory of Precision Measurement Technology and Instruments (Pilt1705)
the ‘111’ Project by the State Administration of Foreign Experts Affairs
the Ministry of Education of China (Grant No. B07014)
