摘要
随着半导体产业的快速发展,传统的硅抛光片已不能完全满足半导体器件的需求。硅外延片具有质量高、电学性能优越的特点,在分立器件和IC领域已被广泛应用。硅外延片质量的不断提高有赖于外延生长工艺的改进,生长工艺的进步有得益于硅外延炉设计的改进。通过对各个时期出现的硅外延炉的主要技术特点进行讨论,回顾硅外延炉50年来的发展历程,为今后外延炉设计的发展提供参考借鉴。
With the rapid development of semiconductor industry,traditional polished silicon wafer can not meet the demand of semiconductor devices completely.As silicon epitaxial wafers are high-quality and have excellent electrical properties,they have been widely used in fields of discrete devices and IC.The improvement of silicon epitaxial wafer quality depends on the progress of epitaxial process,and the rapid development of process technology strongly relies on the design of silicon epitaxy reactor.The main properties of reactors in different stages are discussed.The evolution of epitaxy reactor in the last 50 years are reviewed to provide reference for the development of epitaxy reactor design in the future.
作者
唐发俊
赵扬
黄钦
王楠
TANG Fanjun;ZHAO Yang;HUANG Qin;WANG Nan(46^th Research Institute of China Electronics Technology Group Corporation,Tianjin 300220,China;Guangdong Institute of Semiconductor Industrial Technology,Guangzhou 510651,Guangdong Province,China)
出处
《天津科技》
2020年第1期29-31,共3页
Tianjin Science & Technology
基金
天津市自然科学基金“基于连续波激光辐照诱导富硅氧化硅的相变机理研究”(18JCYBJC41800)
天津市科技计划项目“特种高频器件用硅外延薄层高阻材料的制备及核心技术基础研究”(18ZXJMTG00300)
关键词
硅外延炉
电磁感应加热
辐照加热
单片式硅外延炉
silicon epitaxy reactor
electromagnetic induction heating
irradiant heating
single-wafer silicon epitaxy reactor