调制周期对Al/MoO3反应薄膜热性能和发火性能的影响

Influence of Modulation Period on the Thermal Properties and Firing Propertiesof Al/MoO3 Reactive Films

为了考察调制周期对反应薄膜性能的影响,采用磁控溅射技术制备了厚度为3μm,调制周期为50,150 nm和300 nm的Al/MoO3反应薄膜,采用差示扫描量热仪(DSC)探索了调制周期对Al/MoO3反应薄膜放热过程和反应活化能的影响;使用高速摄影和激光点火技术研究了三种调制周期反应薄膜的燃烧速率,通过与半导体桥和桥丝融合形成含能点火器件,考察了调制周期对电流和电压发火感度的影响。结果显示调制周期由50 nm增加到300 nm时,Al/MoO3反应薄膜燃烧速率由5.35 m·s^-1降低到1.75 m·s^-1。三种调制周期(50,150,300 nm)Al/MoO3反应薄膜半导体桥点火器件的50%电流发火电流分别为1.44,1.74 A和1.87 A;Al/MoO3反应薄膜桥丝点火器件的50%发火电流分别为0.08,0.65 A和1.02 A;将Al/MoO3反应薄膜与半导体桥和桥丝换能元结合形成点火器件,在点火间隙为1 mm的情况下,能够点燃钝感点火药硼-硝酸钾(B-KNO3)药片,提升点火系统的点火能力和可靠性。

In order to investigate the effects of modulation period on the thermal properties and firing properties of Al/MoO3 reactive films,Al/MoO3 reactive film with 3 μm thickness was deposited by magnetron sputtering. The modulation period of Al/MoO3 reactive film was 50 nm,150 nm and 300 nm,respectively. The reaction process and energy of Al/MoO3 reactive films were measured by DSC. The combustion speed of Al/MoO3 reactive films were detected by high-speed camera. The initiators were integrated Al/MoO3 reactive film with semiconductor bridge and bridge wire,and the current-firing sensitivities and voltagefiring sensitivities were also explored by Langlie method. The combustion speed was decreased from 5.35 m·s^-1 to 1.75 m·s^-1 as the modulation period increased from 50 nm to 300 nm. The 50% firing current of semiconductor bridge initiators was 1.44 A,1.74 A and 1.87 A,and the 50% firing current of bridge wire initiators was 0.08 A,0.65 A and 1.02 A when the modulation period of Al/MoO3 reactive films was 50 nm,150 nm and 300 nm,respectively. The bridge wire initiator can ignite the insensitive ignition composition of B-KNO3 tablet with 1 mm ignition gap. The excellent firing parameters and outstanding ignition ability can lead to a remarkable optimization for the traditional electronic initiators.