化学气相沉积法制备ZnSe多晶材料的缺陷研究

Study on the Defects of ZnSe Polycrystalline Materials Prepared by Chemical Vapor Deposition Method

本文介绍了ZnSe晶体的制备方法及其重要应用背景,系统地总结了化学气相沉积法(CVD)制备ZnSe过程中产生的各类缺陷,包括云雾、孔洞和微裂纹、夹杂、分层和胞状物。采用SEM、体视显微镜、金相显微镜、傅里叶光谱仪等方法对缺陷进行了表征。结合国内外文献和检测结果,对各类缺陷可能的产生机理及抑制方法进行了阐述与分析。

Preparation method and the important application background of ZnSe crystal were introduced. Various defects produced in the preparation of ZnSe by chemical vapor deposition( CVD),including haze,hole and microcrack,inclusion,layer and cellular,were summarized systematically. The defects were characterized by SEM,stereoscopic microscope,metallographic microscope and Fourier spectrometer. Based on domestic and foreign literatures and the analysis by our ourselves,the possible mechanism and inhibition methods of various defects were expounded and analyzed.