GaN HEMT逆压电效应及退化机理研究

Study on Inverse Piezoelectric Effect and Degradation Mechanism in GaN HEMT

GaN HEMT器件在高压、高频、大功率应用领域中具有广泛的应用前景,但逆压电效应是其高可靠应用中面临和亟待解决的重要问题。本文系统梳理了国内外的文献报道,研究了GaN HEMT存在的逆压电效应,分析了逆压电效应导致的器件性能退化机理,定位了逆压电效应引起器件的结构损伤位置,最后给出了抑制逆压电效应的方法,以期提高GaN HEMT的可靠性。

GaN HEMT device has a widely application prospect in high voltage,high frequency and high power application fields.But the inverse piezoelectric effect (IPE) is an important problem to be solved in high reliable applications.The domestic and foreign literature reported is reviewed systematically in this paper,the inverse piezoelectric effect of GaN HEMT is studied,the degradation mechanisms are analyzed,the structural damage caused by IPE is located,and the methods to suppress the IPE are also proposed,so as to improve the reliability of GaN HEMT.