AlGaN/GaN高电子迁移率晶体管温度传感器特性

Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor

本文制作了基于无栅AlGaN/GaN高电子迁移率晶体管结构的温度传感器,并对其温度相关的电学特性进行了表征.实验测试了器件从50℃到400℃的变温电流-电压特性,研究了器件灵敏度随着器件沟道长宽比的变化,并研究了在300—500℃高温的空气和氮气中经过1 h恒温加热后器件的电学特性变化.理论与实验研究结果表明,随着器件沟道长宽比的增大,器件的灵敏度会随之上升;在固定电流0.01 A下,器件电压随温度变化的平均灵敏度为44.5 mV/℃.同时,稳定性实验显示器件具有较好的高温保持稳定性.

Semiconductor temperature sensors have been widely used in medical,industrial,aviation and civil fields due to their advantages such as high sensitivity,small size,low power consumption and strong anti-interference ability.However,most Si-based temperature sensors are not suitable for the application in high-temperature environments.The new AlGaN/GaN heterojunction material not only has a wide band gap,but also has a high two-dimensional electron gas concentration and carrier mobility.Therefore,the device made with it not only has good electrical properties,but also can be applied in ultra-high environments.In this paper,a temperature sensor based on gateless AlGaN/GaN high electron mobility transistor structure was fabricated and its temperature-dependent electrical properties were characterized.The temperature dependence of current-voltage characteristics of the device were tested from 50 to 400°C.The sensitivity of the device was studied as a function of the channel aspect ratio of the device.The stability of electrical properties was characterized after heating in air and nitrogen at 300—500°C for 1 hour.The theoretical and experimental results show that as the aspect ratio of the device increases,the sensitivity of the device increases.At a fixed current of 0.01 A,the average sensitivity of the device voltage with temperature changes is 44.5 mV/°C.Meanwhile,the good high temperature retention stability is shown during stability experiments.