基于喷墨打印方法锌锡氧化物薄膜晶体管制备与性能研究

Preparation and properties of zinc tin oxide thin film transistor based on inkjet printing

通过在乙二醇甲醚中溶解二水合乙酸锌(Zn(CH3COO)2·2H 2O)和二水合氯化亚锡(SnCl2·2H2O)制备了锌锡氧化物(ZnSnO)前驱体溶液,采用喷墨打印技术制备了锌锡氧化物薄膜晶体管(ZTO-TFT),研究了不同退火温度对ZnSnO薄膜光透过率和TFT器件电学性能的影响.结果表明,不同退火温度对薄膜的可见光区透过率有一定影响,退火温度低于400℃时,随着退火温度的升高,薄膜的可见光区透过率有所上升,当退火温度达到400℃以上时,薄膜的可见光区透过率基本不受影响,且平均透过率大于80%;随着退火温度的升高,打印制备的TFT器件的载流子迁移率和电流开关比随之增大,当退火温度达到500℃时,打印制备的TFT器件电流开关比达到104.因此,合理较高的退火温度有利于打印方法制备的ZTO-TFT器件性能的改善.

Zinc tin oxide(ZnSnO)precursor solution was prepared by dissolving zinc acetate(Zn(CH3COO)2·2H2O)and stannous chloride(SnCl2·2H2O)in Ethylene glycol methyl ether.Zinc tin oxide-thin film transistor(ZTO-TFT)was prepared by inkjet printing technology.The effects of different annealing temperatures on the optical permeability of ZnSnO film and the electrical properties of TFT devices were studied.Results show that the area visible light transmittance of different annealing temperature on the film has a certain influence,when annealing temperature is below 400℃,with the increase of annealing temperature,the visible light transmittance of the film has increased,when the annealing temperature is above 400℃,the visible light transmittance of the film is basically unaffected,and the average transmittance is more than 80%;With the increase of annealing temperature,the carrier mobility and current switching ratio of the printed TFT device increase accordingly.When the annealing temperature reaches 500℃,the current switching ratio of the printed TFT device reaches 104.Therefore,reasonably high annealing temperature is beneficial to the improvement of the performance of ZTO-TFT device prepared by printing method.