摘要
NBTI效应严重影响了器件的高温可靠性,本文对基于1.2μm工艺的PDSOI器件进行了NBTI效应研究。通过加速应力试验得到了NBTI效应对PDSOI器件阈值电压漂移的影响,其主要影响因素有应力时间、温度和栅偏压。试验中通过Vg模型对PDSOI器件进行了NBTI效应寿命预测,实现了对自有1.2μm工艺PDSOI器件的高温可靠性评价。
The NBTI effect seriously affects the high temperature reliability of the device.In this paper,the NBTI effect of 1.2μm process Partially Depleted Silicon On Insulator(PDSOI)device was studied.Acceleration stressing experiments were made to obtain threshold voltage shift of PDSOI device effected by NBTI.The main influencing factors are stress time,temperature and gate bias voltage.Through the Vg model,the NBTI effect lifetime of PDSOI device is estimated which can be used to evaluate the high temperature reliability of 1.2μm process PDSOI device.
作者
王成成
周龙达
蒲石
王芳
杨红
曾传滨
韩郑生
罗家俊
卜建辉
Wang Chengcheng;Zhou Longda;Pu Shi;Wang Fang;Yang Hong;Zeng Chuanbin;Han Zhengsheng;Luo Jiajun;Bu Jianhui(Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;AVIC Xi'an Institute of Aeronautical Computing Technology,Xi'an 710065,China;Key Laboratory of Silicon Device Technology,Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Microelectronic Devices and Integrated Technology,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《航空科学技术》
2020年第1期76-80,共5页
Aeronautical Science & Technology
基金
航空科学基金(201743X2001)~~
