激光等离子体13.5 nm极紫外光刻光源进展

Research progress on laser-produced plasma light source for 13.5 nm extreme ultraviolet lithography

半导体产业是高科技、信息化时代的支柱。光刻技术,作为半导体产业的核心技术之一,已成为世界各国科研人员的重点研究对象。本文综述了激光等离子体13.5 nm极紫外光刻的原理和国内外研究发展概况,重点介绍了其激光源、辐射靶材和多层膜反射镜等关键系统组成部分。同时,指出了在提高激光等离子体13.5 nm极紫外光源输出功率的研究进程中所存在的主要问题,包括提高转换效率和减少光源碎屑。特别分析了目前已实现百瓦级输出的日本Gigaphoton公司和荷兰的ASML公司的极紫外光源装置。最后对该项技术的发展前景进行了总结与展望。

The semiconductor industry is the backbone of the high-tech and information age.Lithography technology,one of the core technology of the semiconductor industry,has become a key research subject all around the world.This article mainly discusses the light source of 13.5 nm Extreme Ultraviolet Lithography(EUVL)by using Laser-Produced Plasma(LPP).It makes a brief introduction to the principles behind this technology and the development history of this field at home and abroad.The introductions include the materials used in the multilayer mirror,and rationale for the selection of materials,the shape and design of the target and the type of laser.At the same time,this article points out that the main problems for the EUVL are light debris reduction and the conversion efficiency improvement of EUV light.This paper also gives special analysis of the light source output devices of 13.5 nm EUVL machines produced by international famous companies——Gigaphoton of Japan and ASML of the Netherlands,which can generate more than 100 W level EUV power.Finally,this article summarizes and forecasts future research related to this technology.