高硅富铟渣氧压酸浸过程中浸铟沉硅的研究

Study on Indium Leaching and Silicon Precipitation from Indium-Rich High-Silicon Bearing Slag during Oxygen Pressure Acid Leaching

采用氧压酸浸工艺处理高硅富铟渣,系统考察了始酸浓度、氧分压、反应温度、反应时间和液固比等对浸铟沉硅效果的影响。试验结果表明:在始酸浓度120g/L、液固比5∶1、釜内压力0.6MPa、反应温度160℃、反应时间1.5h的条件下,铟浸出率高达97.3%,硅沉淀率为98.5%;高压高温工艺能抑制富铟渣酸浸过程中硅胶的形成,浸出矿浆的过滤性能良好。

Indium-rich slag was treated by oxygen pressure acid leaching process.Effects of initial acid concentration,pressure in autoclave,temperature,time and L/S on indium leaching and silicon precipitation were investigated.The results show that indium leaching rate is 97.3%and silicon precipitation rate is 98.5%under the conditions including initial acid concentration of 120g/L,L/S=5/1,pressure in autoclave of 0.6 MPa,reaction temperature of 160℃,and reaction time of 1.5h.High pressure and high temperature process can inhibit formation of silica gel during acid leaching of indium-rich slag,and leaching slurry has good filtration performance.