摘要
A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission,and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated.Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance.The laser chips were p-side-down mounted on the AlN submount,and then tested at continuous wave(CW)operation with the heat-sink temperature setting to 25℃using a thermoelectric cooler(TEC).As high as 60.5%of the wall-plug efficiency(WPE)was achieved at the injection current of 11 A.The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12°C.Accelerated life-time test showed that the laser diodes had lifetimes of over 62111 h operating at rated power of 10 W.
A very highly efficient In Ga Al As/Al Ga As quantum-well structure was designed for 808 nm emission, and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated. Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance. The laser chips were p-side-down mounted on the Al N submount, and then tested at continuous wave(CW) operation with the heat-sink temperature setting to 25 °C using a thermoelectric cooler(TEC). As high as 60.5% of the wall-plug efficiency(WPE) was achieved at the injection current of 11 A. The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12 °C. Accelerated life-time test showed that the laser diodes had lifetimes of over 62 111 h operating at rated power of 10 W.
基金
supported by the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2018GY-005, No. 2017GY-065, No. 2017KJXX-72)
