抛光参数对超薄晶圆表面抛光效果影响的研究

Research on the Influence of the Parameters of Polishing on the Effect of Polishing Ultra-thin Wafer

介绍了抛光工艺及其在硅材料中的应用,重点分析了直径300 mm、厚度50μm±2.5μm的晶圆在抛光加工过程中抛光液的浓度、抛光压力和抛光垫等因素对晶圆表面粗糙度及表面平整性的影响,通过试验确定了超薄晶圆在抛光过程中合适的工艺参数。

This paper introduces the polishing process and its application in wafer materials.It focus on the influence of roughness and flatness of wafer during polishing process,which it is the diameter of 300 mm and the thickness of 50μm±2.5μm,and the influencing factors includes concentration of polishing fluid,polishing pressure and polishing pad.The appropriate process parameters of ultra-thin wafers during polishing are determined through experiments.