非晶CuNiSnO薄膜的生长与光电性能

Growth and Optoelectronic Properties of Amorphous CuNiSnO Thin Films

采用脉冲激光沉积(PLD)法制备出一种新型的p型非晶氧化物-半导体非晶CuNiSnO(CNTO)。CNTO薄膜分别在室温(RT)与300℃的生长条件下获得,对其结构、光学和电学性能进行研究。研究结果表明,所得的CNTO薄膜为非晶态,表面平整,元素分布均匀。当衬底温度由RT升高至300℃时,CNTO薄膜的粗糙度由0.38nm下降至0.26nm;电阻率由高阻态转变为p型导电态,空穴浓度为4.06×1014/cm3。在300℃下生长的非晶CNTO薄膜表现为明显的p型导电,气敏测试结果进一步佐证了这一结论。此外,非晶CNTO薄膜可见光透过率达80%以上,为宽禁带非晶氧化物半导体,有望向透明显示领域发展。

Amorphous CuNiSnO(CNTO)thin films,as a new p-type amorphous oxide semiconductor,were deposited by pulsed laser deposition(PLD)at room temperature(RT)and 300℃,respectively.The structural,optical and electrical properties of the films were studied.Both the CNTO films are amorphous,having flat and smooth surface and a homogenous distribution of all elements.When the growth temperature increases from RT to 300℃,the surface roughness of the CNTO films decreases from 0.38 nm to 0.26 nm,and the resistivity changes from high resistivity to p-type conductivity with hole concentration of 4.06×10^(14)/cm^3.The CNTO films grown at 300℃are of obvious p-type conductivity,which has been further confirmed by a gas sensing test.Furthermore,both the films have an average transmission above 80%in the visible-light range,which are wide bandgap amorphous semiconductors.The p-type amorphous CNTO films may have prospect towards the field of transparent displays.