Bi2O3与Sb2O3预合成对高性能ZnO-Bi2O3基压敏陶瓷的显微结构与电性能影响

Effect of Presynthesis of Bi2O3 and Sb2O3 on Microstructure and Electrical Properties of High Performance ZnO-Bi2O3-based Varistor Ceramics

为了降低Bi2O3和Sb2O3因熔点低在烧结过程中的挥发程度,以及改善球磨法所得陶瓷样品的显微结构均匀性,实现1000℃以下烧结获得综合性能良好的ZnO压敏陶瓷,选取综合性能良好的ZnO-Bi2O3基础陶瓷配方,将其中的Bi2O3和Sb2O3按照1︰1物质的量比例预合成,按传统电子陶瓷工艺制备压敏陶瓷,并与传统配料方式制备获得的样品作对比。结果表明:Bi2O3和Sb2O3预合成的样品比未预合成的样品气孔少、致密度较高、粒径分布更加均匀,压敏电压460-600V/mm,非线性系数40-60,漏电流低于1μA。研究结果有望为多层片式ZnO压敏元件实现纯银内电极共烧提供实验依据。

The high performance Zn O-Bi2O3-based ceramics formula whose Bi2O3 and Sb2O3 pretreated at a ratio of 1︰1 was used to decrease the volatilization of Bi2O3 and Sb2O3 which has low melting point,to reduce the sintering temperature below1000℃and improve the microstructure uniformity of the ceramic samples which were obtained by ball milling.The varistor ceramic samples were prepared with the traditional method.The results show that the samples with Bi2O3 and Sb2O3 pretreated have less porosity,higher density,voltage in the range of 460-600 V/mm,nonlinear coefficient in the range of 40-60,leakage current less than 1μA.Pretreatment was effective in preventing the volatilization of Bi2O3 and Sb2O3.The results can provide theoretical support for the manufacture of multilayer Zn O varistors with silver(Ag)as inner electrode.