基于动态负载线GaN HEMT模型的谐波调谐功放设计

Design of harmonic tuned power amplifier based on dynamic load-line GaN HEMT model

基于动态负载线GaN HEMT大信号模型和负载牵引技术设计并制作了一款工作在2 GHz的高效率谐波调谐功放。在晶体管寄生参数和封装参数未知的情况下,通过负载牵引技术初步确定满足性能要求的最佳基波和谐波阻抗值,并根据动态负载线大信号模型所观察到的漏极电流、电压波形对功放整体电路进行调谐和优化。测试结果表明,当输入功率为27 dBm时,该功放漏极效率可达81.53%,功率附加效率为76%,输出功率为38.69 dBm,增益为11.69 dB。采用该方法所设计的高效率谐波调谐功放在满足较高性能的同时,具有结构简单、调谐方便的优点。

Based on the dynamic load-line GaN HEMT large signal model and load-pull technology,a high efficiency harmonic tuned power amplifier operating at 2 GHz is designed and implemented.Under the condition that the parasitic parameters and package parameters of the transistor are unknown,the optimal fundamental and harmonic impedance values that meet the performance requirements are initially determined by the load-pull technology,and tuning and optimizing the overall circuit of the power amplifier based on the drain current and voltage waveforms obtained from the dynamic load-line large signal model.The measured results show that,when the input power is 27 dBm,the drain efficiency reaches 81.53%,the power added efficiency is 76%,the output power is 38.69 dBm,and the gain is 11.69 dB.The high-efficiency harmonic tuned power designed by this method has the advantages of simple structure and convenient tuning,while satisfying high performance.