摘要
为了分析并精确预测半导体光放大器的性能,对InP-InGaAsP均匀掩埋的半导体光放大器建立了一种有效的数学模型,考虑了自发辐射与受激辐射之间的关系,实时模拟分析了偏置电流、输入功率对增益和噪声指数的影响。结果表明,在偏置电流为120mA、输入功率为-10dBm时,半导体光放大器的性能最佳。该模型能够对半导体光放大器的设计提供一定的借鉴。
In order to analyze and accurately predict the performance of semiconductor optical amplifiers,an effective mathematical model of InP-InGaAsP uniformly buried semiconductor optical amplifier was established.Considering the relationship between spontaneous and stimulated radiation,the effects of bias current and input power on gain and noise index were analyzed by real-time simulation.The results show that,when the bias current is 120mA and the input power is-10dBm,semiconductor optical amplifier has the best performance.The model can provide some reference for the design of semiconductor optical amplifier.
作者
徐贵勇
胡立发
邓灿冉
张士勋
楚广勇
XU Guiyong;HU Lifa;DENG Canran;ZHANG Shixun;CHU Guangyong(School of Science,Jiangnan University,Wuxi 214122,China;National Supercomputing Center in Wuxi,Wuxi 214100,China;Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology,Wuxi 214122,China;Jiangsu Provincial Engineering Laboratory of Pattern Recognition and Computational Intelligence,Wuxi 214122,China)
出处
《激光技术》
CAS
CSCD
北大核心
2020年第2期255-260,共6页
Laser Technology
基金
国家重点研发计划资助项目(2017YFC1502203)
国家自然科学基金面上资助项目(61475152)
江苏省自然科学基金资助项目(BK20170199)
中央高校基础研究专项经费资助项目(JUSRP11835
JUSRP11829)
江苏省“六大人才高峰”资助项目(2016-GDZB-011)。
关键词
光通信
半导体光放大器模型
噪声指数
增益
optical communication
semiconductor optical amplifier model
noise figure
gain
