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Electronic structure of correlated topological insulator candidate YbB6 studied by photoemission and quantum oscillation

Electronic structure of correlated topological insulator candidate YbB6 studied by photoemission and quantum oscillation
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摘要 Angle-resolved photoemission spectroscopy(ARPES)and torque magnetometry(TM)measurements have been carried out to study the electronic structures of a correlated topological insulator(TI)candidate Yb B6.We observed clear surface states on the[001]surface centered at theГ^- and М^- points of the surface Brillouin zone.Interestingly,the fermiology revealed by the quantum oscillation of TM measurements agrees excellently with ARPES measurements.Moreover,the band structures we observed suggest that the band inversion in Yb B6 happens between the Yb5 dand B2bands,instead of the Yb5dand Yb4fbands as suggested by previous theoretical investigation,which will help settle the heavy debate regarding the topological nature of samarium/ytterbium hexaborides. Angle-resolved photoemission spectroscopy(ARPES) and torque magnetometry(TM) measurements have been carried out to study the electronic structures of a correlated topological insulator(TI) candidate Yb B6. We observed clear surface states on the [001] surface centered at the ■ and ■ points of the surface Brillouin zone. Interestingly, the fermiology revealed by the quantum oscillation of TM measurements agrees excellently with ARPES measurements. Moreover,the band structures we observed suggest that the band inversion in Yb B6 happens between the Yb5 dand B2bands, instead of the Yb5dand Yb4fbands as suggested by previous theoretical investigation, which will help settle the heavy debate regarding the topological nature of samarium/ytterbium hexaborides.
作者 张腾 李岗 孙淑翠 秦娜 康璐 姚淑华 翁红明 S K Mo 李璐 柳仲楷 杨乐仙 陈宇林 T Zhang;G Li;S C Sun;N Qin;L Kang;S H Yao;H M Weng;S K Mo;L Li;Z K Liu;L X Yang;Y L Chen(State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China;Department of Physics,University of Michigan,Ann Arbor,MI 48109,USA;Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;National Laboratory of Solid State Microstructures&Department of Materials Science and Engineering,Nanjing University,Nanjing 210093,China;Collaborative Innovation Center of Quantum Matter,Beijing,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;CAS Center for Excellence in Topological Quantum Computation,Beijing 100190,China;Physical Science Laboratory,Huairou National Comprehensive Science Center,Beijing 101400,China;Advanced Light Source,Lawrence Berkeley National Laboratory,Berkeley,CA 94720,USA;School of Physical Science and Technology,ShanghaiTech University and CAS-Shanghai Science Research Center,Shanghai 201210,China;ShanghaiTech Laboratory for Topological Physics,Shanghai 200031,China;Frontier Science Center for Quantum Information,Beijing 100084,China;Department of Physics,Clarendon Laboratory,University of Oxford Parks Road,Oxford OX13PU,UK)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第1期70-75,共6页 中国物理B(英文版)
基金 supported by the National Natural Science Foundation of China (Grant Nos. 11774190, 11674229, 11634009, and 11774427) the National Key R&D Program of China (Grant Nos. 2017YFA0304600 and 2017YFA0305400) support from the EPSRC (UK) grant EP/K04074X/1 and a DARPA (US) MESO project (No. N66001-11-1-4105) supported by the Office of Naval Research through the National Science Foundation under Award No. DMR-1707620 (magnetization measurement) supported by the Office of Basic Energy Sciences of the U.S. Department of Energy (DE-AC0205CH11231) SIMES and SLAC National Accelerator Laboratory is supported by the Office of Basic Energy Sciences of the U.S. Department of Energy (DE-AC0276SF00515) Nanjing University is supported by the National Basic Research Program of China (Grant No. 51002074) the National Basic Research of China (Grant Nos. 2012CB921503 and 2012CB632702)
关键词 topological insulator electronic structure surface states topological insulator electronic structure surface states
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