摘要
We reported a study of tunnel magnetoresistance(TMR)effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging.TMR value up to 290%has been observed in single(La1-yPry)1-x CaxMnO3 nanowires with varying width.We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions.Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.
We reported a study of tunnel magnetoresistance（TMR）effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging.TMR value up to 290% has been observed in single(La1-yPry)1-x CaxMnO3 nanowires with varying width.We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions.Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.
作者
郁扬
胡雯婕
李强
时倩
朱银燕
林汉轩
苗田
白羽
王艳梅
杨文婷
王文彬
郭杭闻
殷立峰
沈健
Yang Yu;Wenjie Hu;Qiang Li;Qian Shi;Yinyan Zhu;Hanxuan Lin;Tian Miao;Yu Bai;Yanmei Wang;Wenting Yang;Wenbin Wang;Hangwen Guo;Lifeng Yin;Jian Shen(State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai 200433,China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University,Shanghai 200433,China;Collaborative Innovation Center of Advanced Microstructures,Nanjing 210093,China)
基金
Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0300702)
Shanghai Municipal Natural Science Foundation,China(Grant Nos.19ZR1402800,18JC1411400,18ZR1403200,and 17ZR1442600)
the Program of Shanghai Academic Research Leader,China(Grant Nos.18XD1400600 and 17XD1400400)
the China Postdoctoral Science Foundation(Grant Nos.2016M601488 and 2017T100265)
