摘要
The design of the active region structures,including the modifications of structures of the quantum barrier(QB)and electron blocking layer(EBL),in the deep ultraviolet(DUV)Al Ga N laser diode(LD)is investigated numerically with the Crosslight software.The analyses focus on electron and hole injection efficiency,electron leakage,hole diffusion,and radiative recombination rate.Compared with the reference QB structure,the step-like QB structure provides high radiative recombination and maximum output power.Subsequently,a comparative study is conducted on the performance characteristics with four different EBLs.For the EBL with different Al mole fraction layers,the higher Al-content Al Ga N EBL layer is located closely to the active region,leading the electron current leakage to lower,the carrier injection efficiency to increase,and the radiative recombination rate to improve.
The design of the active region structures, including the modifications of structures of the quantum barrier(QB) and electron blocking layer(EBL), in the deep ultraviolet(DUV) Al Ga N laser diode(LD) is investigated numerically with the Crosslight software. The analyses focus on electron and hole injection efficiency, electron leakage, hole diffusion,and radiative recombination rate. Compared with the reference QB structure, the step-like QB structure provides high radiative recombination and maximum output power. Subsequently, a comparative study is conducted on the performance characteristics with four different EBLs. For the EBL with different Al mole fraction layers, the higher Al-content Al Ga N EBL layer is located closely to the active region, leading the electron current leakage to lower, the carrier injection efficiency to increase, and the radiative recombination rate to improve.
作者
王一夫
Mussaab I Niass
王芳
刘玉怀
Yi-Fu Wang;Mussaab I Niass;Fang Wang;Yu-Huai Liu(National Center of International Joint Research for Electronic Materials and Systems,Zhengzhou University,Zhengzhou 450001,China;International Joint Laboratory of Electronic Materials and Systems,Zhengzhou University,Zhengzhou 450001,China;School of Information Engineering,Zhengzhou University,Zhengzhou 450001,China)
基金
Project supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program,China(Grant No.2016YFE0118400)
the Key Project of Science and Technology of Henan Province,China(Grant No.172102410062)
the National Natural Science Foundation of China and Henan Provincial Joint Fund Key Project(Grant No.U1604263)
