摘要
通过非对称电压补偿方法研究了FFS模式下的残像现象。实验结果表明在不更换盒内材料的情况下,非对称电压补偿可以快速有效地改善残像问题。同时研究了不同的材料、不同的像素结构对应的实际补偿电压。结果显示随着配向膜电阻的增加,补偿电压有增大趋势(0.1 V到0.3 V),正负性液晶以及不同像素结构(公共电极层分别位于最上层和中间层,Top/Mid com)呈相反趋势(+0.3 V和-0.3 V),且不同于以往的研究,最终的残像结果负性液晶好于正性液晶。不同的彩膜平坦化层材料对应的补偿电压也有较明显差异。研究为FFS液晶显示模式残像的快速改善提供了参考。
The image sticking in FFS mode using asymmetric voltage compensation method was investigated. The result shows that the image sticking could be greatly and quickly improved by this method without any change on the cell materials. It also indicated that the compensated voltage increased with the volume resistance increases of PI(polyimide) film(0.1 V to 0.3 V). The negative/positive liquid crystal、the top/middle pixel structure showed absolutely opposite voltage tendency(+0.3 V and-0.3 V). The negative LC showed better IS performance, which was different from the past studies. The different OC(Over Coat) films on CF side also showed great different compensated voltage. These results could give the guidance for improving the image sticking phenomenon greatly and quickly in FFS mode.
作者
时成瑛
蔡敏
傅炯樑
王一明
秦丹丹
夏志强
SHI Chengying;CAI Min;FU Jiongliang;WANG Yiming;QIN Dandan;XIA Zhiqiang(Shanghai AVIC Optoelectronics Co.,Ltd,Shanghai,201108,CHN)
出处
《光电子技术》
CAS
北大核心
2019年第4期285-288,共4页
Optoelectronic Technology
关键词
残像
边缘场切换技术
挠曲电效应
image sticking
fringe field switching(FFS)
flexoelectric effect