射频功率占比对氮掺杂二氧化钛薄膜性能的影响

Effect of RF Power Ratio on Properties of Nitrogen-Doped TiO2 Film

本研究主要利用射频耦合直流磁控溅射技术,在室温下用TiO2陶瓷靶在玻璃基底上制备N掺杂到TiO2薄膜。同时也利用光学轮廓仪、X射线衍射、扫描电子显微镜、X射线光电子能谱和紫外可见光分光光度计研究了不同射频功率占比对薄膜的微观结构和光学性能的影响。实验结果表明:随着射频功率的增加,薄膜的沉积速率增加,薄膜的结晶性变优,晶粒尺寸变大,N掺入的比例增加,Ti的价态出现未完全氧化的Ti3+,薄膜的禁带宽度也相应地减小,N掺杂TiO2薄膜的吸收边扩展到可见光区域。

This study mainly used RF coupled DC magnetron sputtering technology to prepare N-doped TiO2 thin films on glass substrates at room temperature with TiO2 ceramic targets.At the same time,the effects of different RF power ratios on the microstructure and optical properties of the films were investigated by optical profilometry,X-ray diffraction,scanning electron microscopy,X-ray photoelectron spectroscopy and UV-visible spectrophotometer.The experimental results show that,with the increase of RF power,the deposition rate of the film increases,the crystallinity of the film becomes better,the grain size becomes larger,the proportion of N doping increases,and the valence state of Ti shows incompletely oxidized Ti3+.The forbidden band width is also correspondingly reduced,and the absorption edge of the N-doped TiO2 film is extended to the visible light region.