摘要
Inorganic semiconductor plays a key role for today’s technological progress [1–4]. Comparing with other organic semiconductors [5,6] and two-dimensional(2D) metal sulfides [7–10], Ⅲ-nitrides as direct bandgap semiconductors have achieved enormous success in commercial applications.
基金
supported by the National Key R&D Program of China(Grant No.2016YFB0400101)
the National Science Fund for Distinguished Young Scholars(Grant No.61725403)
the National Natural Science Foundation of China(Grant Nos.61574142,61874118)
the Key Program of the International Partnership Program of Chinese Academy of Sciences(Grant No.181722KYSB20160015)
the Jilin Provincial Science&Technology Department(Grant No.20180201026 GX)
the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDA22020602)
the Youth Innovation Promotion Association of CAS
