W波段3.4W/mm GaN功率放大器MMIC

W-band 3.4W/mm GaN power amplifier MMIC

采用100nm GaN高电子迁移率晶体管工艺,研制了一款应用于W波段的高功率密度功率放大器微波单片集成电路。该工艺采用厚度为50μm的SiC作为衬底。放大器采用三级级联拓扑结构,利用高低阻抗微带线与上下极板电容构成W波段低损耗阻抗匹配网络,实现较高的增益和较高的输出功率。同时,该放大器通过由1/4波长微带线构成的直流偏置网络进行片上集成设计,实现全单片集成。测试结果表明,当工作电压为15V时,该放大器芯片在88~98GHz范围内,典型小信号增益为20dB,连续波状态下饱和输出功率大于250mW。在98GHz下,芯片实现最大输出功率为405mW,功率增益为13dB,功率附加效率为14.4%。因此,该GaN功率放大器芯片输出相应的最大功率密度达到3.4W/mm。

A high power density monolithic microwave integrated circuit(MMIC)power amplifier is presented for W band application.The chip is fabricated using the 100 nm GaN high electron mobility transistor(HEMT)technology on a 50μm SiC substrate.The amplifier is designed for a high gain and high output power with three stage topology and low-loss impedance matching networks designed with high and low characteristic impedance micro-strips and metal-insulator-metal(MIM)capacitors.And quarter-wave micro-strips are employed for the DC bias networks,while the power amplifier is also fully integrated with bias networks on the wafer.Measurement results show that,at the drain bias of 15 V,the amplifier MMIC achieves a typical small signal gain of 20 dB within the frequency range of 88~98 GHz.Moreover,the saturated output power is more than 250 mW at the continuous-wave mode.At 98 GHz,apeak output power of 405 mW has been achieved with an associated power gain of 13 dB and a power-added-efficiency of14.4%.Thus,this GaN MMIC delivers a corresponding peak power density of 3.4 W/mm at the W band.