摘要
A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channel high-electron-mobility-transistors(HEMTs).For GaN channel HEMTs with gate-drain spacing LGD=2.5μm,the breakdown voltage VBR increases from 518 V to 582 V by increasing gate metal height h from 0.2μm to 0.4μm.For GaN channel HEMTs with LGD=7μm,VBR increases from 953 V to 1310 V by increasing h from 0.8μm to 1.6μm.The breakdown voltage enhancement results from the increase of the gate sidewall capacitance and depletion region extension.For Al0.4Ga0.6N channel HEMT with LGD=7μm,VBR increases from 1535 V to 1763 V by increasing h from 0.8μm to 1.6μm,resulting in a high average breakdown electric field of 2.51 MV/cm.Simulation and analysis indicate that the high gate metal height is an effective method to enhance breakdown voltage in GaN-based HEMTs,and this method can be utilized in all the lateral semiconductor devices.
A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channel high-electron-mobility-transistors（HEMTs）.For GaN channel HEMTs with gate-drain spacing LGD=2.5 μm,the breakdown voltage VBR increases from 518 V to 582 V by increasing gate metal height h from 0.2 μm to 0.4 μm.For GaN channel HEMTs with LGD=7 μm,VBR increases from 953 V to 1310 V by increasing h from 0.8 μm to 1.6 μm.The breakdown voltage enhancement results from the increase of the gate sidewall capacitance and depletion region extension.For Al0.4Ga0.6N channel HEMT with LGD=7 μm,VBR increases from 1535 V to 1763 V by increasing h from 0.8μm to 1.6 μm,resulting in a high average breakdown electric field of 2.51 MV/cm.Simulation and analysis indicate that the high gate metal height is an effective method to enhance breakdown voltage in GaN-based HEMTs,and this method can be utilized in all the lateral semiconductor devices.
作者
王中旭
杜林
刘俊伟
王颖
江芸
季思蔚
董士伟
陈伟伟
谭骁洪
李金龙
李小军
赵胜雷
张进成
郝跃
Zhong-Xu Wang;Lin Du;Jun-Wei Liu;Ying Wang;Yun Jiang;Si-Wei Ji;Shi-Wei Dong;Wei-Wei Chen;Xiao-Hong Tan;Jin-Long Li;Xiao-Jun Li;Sheng-Lei Zhao;Jin-Cheng Zhang;Yue Hao(Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Shanghai Precision Metrology and Testing Research Institute,Shanghai 201109,China;China Academy of Space Technology(Xi'an),Xi'an 710000,China;Sichuan Institute of Solid-State Circuits,CETC,Chongqing 400060,China)
基金
Project supported by the National Key Science&Technology Special Project of China(Grant No.2017ZX01001301)
the National Key Research and Development Program of China(Grant No.2016YFB0400100)
the National Natural Science Foundation of China(Grant Nos.51777168 and 61801374).
