不同调制周期的Al/MoO3半导体桥发火器件电爆性能研究

Study on the Electric Explosion Property of Al/MoO3 Energetic Semiconductor Bridge Ignitor with Different Modulation Periods

采用磁控溅射技术制备总厚度为6μm,调制周期分别为134nm/166nm和22nm/28nm的Al/MoO3复合薄膜,并将其与半导体桥(SCB)整合形成含能半导体桥(ESCB)发火器件,研究了Al/MoO3含能薄膜及SCB-Al/MoO3含能半导体桥的性能。DSC分析表明,调制周期为22nm/28nm的薄膜只有1个放热峰,其活化能为245k J/mol;调制周期为134nm/166nm的薄膜有3个放热峰,最大放热峰的活化能为200k J/mol。22nm/28nm的含能薄膜燃速为5.34m/s;134nm/166nm的含能薄膜燃速为1.79m/s。随着调制周期的增加,SCB-Al/MoO3的临界发火时间变长,调制周期对临界发火能量、作用总时间、作用总能量无影响,SCB-Al/MoO3(22nm/28nm)的电压发火感度高于SCB-Al/MoO3(134nm/166nm)。

Al/MoO3 composite films with a total thickness of 6μm and modulation periods of 134 nm/166 nm or 22 nm/28 nm were fabricated by magnetron sputtering.These composite films were integrated with the SCB to form an energetic semiconductor bridge(ESCB)ignition devices.Then the performance of Al/MoO3 composite films and SCB-Al/MoO3 energetic semiconductor bridges were studied.DSC spectrums showed that the film with a modulation period of 22 nm/28 nm has only one exothermic peak,where the activation energy calculated by the Ozawa method is 245 k J/mol.And the film with a modulation period of 134 nm/166 nm has three exothermic peaks,and the activation energy of the highest peak is 200 kJ/mol.The burning rate of the 22 nm/28 nm composite film is 5.34 m/s,and that of the 134 nm/166 nm film is 1.79 m/s.With the increase of modulation period,the critical ignition time is prolonged,while the critical ignition energy,total time and energy of action don’t affected by modulation period.The firing sensitivity of SCB-Al/MoO3(22 nm/28 nm)is higher than that of SCB-Al/MoO3(134 nm/166 nm).