期刊文献+

黑磷烯稳定性增强研究进展 被引量:12

Progress on stability enhancement of black phosphorene
下载PDF
导出
摘要 黑磷烯是一种新型的二维材料,具有高的载流子迁移率,可调节的直接带隙,独特的各向异性物理化学性质,在储能、光电、医药、传感器等领域具有广阔的应用前景。由于黑磷烯容易在潮湿和氧气存在的环境条件下发生氧化降解,限制了其实际的应用。综述了黑磷烯的不稳定机制并总结了相关研究者近年来针对提高黑磷烯稳定性的一些策略与方法,并介绍了本课题组在解决黑磷烯稳定性方面的工作进展,对未来提高黑磷烯的稳定性方法进行了展望。 Black phosphorene is a new type of two-dimensional material with high carrier mobility, tunable direct band gap, unique anisotropic physical and chemical properties, leading to wide application prospects in energy storage, photoelectric, medicine, sensing and other fields. However, black phosphorene is easy to be degraded at the presence of moisture and oxygen, which limits its practical applications. Therefore, how to solve the problem of phosphorene stability has become the focus of current research. In order to let researchers who just entered the field have a comprehensive understanding of this problem, the unstable mechanisms of black phosphorene were first reviewed and then several typical strategies in recent years to stabilize black phosphorene were summarized, the progress of our research group in solving the stability of black phosphorene were also introduced. Finally, on the basis of the current progress, future research directions to improve the stability of black phosphene were suggested.
作者 刘艳奇 何路东 廉培超 陈鑫智 梅毅 LIU Yanqi;HE Ludong;LIAN Peichao;CHEN Xinzhi;MEI Yi(Faculty of Chemical Engineering,Kunming University of Science and Technology,Kunming 650500,Yunnan,China;Yunnan Key Laboratory of Energy Conservation and New Materials for Phosphorus Chemical Industry,Kunming 650500,Yunnan,China)
出处 《化工学报》 EI CAS CSCD 北大核心 2020年第3期936-944,共9页 CIESC Journal
基金 国家自然科学基金项目(21808065)。
关键词 黑磷烯 二维材料 纳米材料 稳定性 氧化 降解 black phosphorene two-dimensional materials nanomaterials stability oxidation degradation
  • 相关文献

参考文献1

二级参考文献27

  • 1Novoselov, K. S.; Geim, A. K. Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A.Electric field effect in atomically thin carbon films. Science 2004, 306, 666-669.
  • 2Geim, A. K.; Novoselov, K. S. The rise of graphene. Nat. Mater. 2007, 6, 183-191.
  • 3Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, H.-Y.; Grill, A.; Avouris, P. 100-GHz transistors from wafer-scale epitaxial graphene. Science 2010, 327, 662-662.
  • 4Geim, A. K. Graphene: Status and prospects. Science 2009, 324, 1530-1534.
  • 5Xu, M. S.; Liang, T.; Shi, M. M.; Chen, H. Z. Graphene- like two-dimensional materials. Chem. Rev. 2013, 113, 3766-3798.
  • 6Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147-150.
  • 7Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-dimensional gas of massless Dirac fermions in graphene. Nature 2005, 438, 197-200.
  • 8Mak, K. F.; Lee, C. G.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
  • 9Radisavljevic, B.; Whitwick, M. B.; Kis, A. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 2011, 5, 9934-9938.
  • 10Wang, H.; Yu, L. L.; Lee, Y.-II.; Shi, Y. M.; Hsu, A.; Chin, M. L.; Li, L.-J.; Dubey, M.; Kong, J.; Palacios, T. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 2012, 12, 4674-4680.

共引文献39

同被引文献51

引证文献12

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部