在Liq中掺杂Yb作为电子注入层修饰电极Yb/Al

Yb/Al electrode modified by Yb-doped Liq electron injection layer

基于绿光器件ITO/HAT-CN/TAPC/CBP∶Ir(ppy)3/TmPyPB/Liq/Al,通过在Liq中掺杂不同浓度的Yb作为电子注入层修饰电极,研究Yb不同浓度的掺杂比对器件性能的影响。研究表明,在Liq中掺杂微量的Yb能有效提高器件的光电性能。当Yb的掺杂比为1.85%时,器件性能最好。在0.25 mA/cm2的条件下点亮,启亮电压为3.65 V,最高亮度为26720 cd/m2,最高电流效率为87.07 cd/A,最高功率效率为74.89 lm/W,最高外量子效率为24.07%。与参考器件对比,其最高亮度提高2181 cd/m2,最高电流效率提高18.42 cd/A,最高功率效率提高10.6 lm/W,最高外量子效率提高5.27%。

Based on green optical device ITO/HAT-CN/TAPC/CBP∶Ir(ppy)3/TmPyPB/Liq/Al,the influence of doping ratio of different concentrations of Yb on device performance is studied by doping different concentrations of Yb in Liq as modified electrode of electron injection layer.The research shows that the doping of Yb in Liq can effectively improve the photoelectric performance of the device.When the doping ratio of Yb is 1.85%,the device performance is the best.Under the condition of 0.25 mA/cm2,the starting voltage is 3.65 V,the maximum brightness is 26720 cd/m2,the maximum current efficiency is 87.07 cd/A,the maximum power efficiency is 74.89 lm/W,and the maximum external quantum efficiency is 24.07%.Compared with the reference device,the maximum brightness increases by 2181 cd/m2,the maximum current efficiency increases by 18.42 cd/A,the maximum power efficiency increases by 10.6 lm/W,and the maximum external quantum efficiency increases by 5.27%.