摘要
P型硅外延材料是制备微波功率器件的关键基础材料,其电阻率的一致性直接影响器件的性能和可靠性。研究通过对Si、N、B 3种元素进行电负性对比,结合P型外延片电容-电压法(CV法)测试波动和纵向载流子分布(SRP)比较分析,确定了造成P型外延电阻率波动的主要原因,并通过对表面态的控制找到解决方案。
P-type silicon epitaxial material is the key material for microwave power devices.The consistency of its resistivity directly affects the performance and reliability of the devices.In this study,the main cause of the resistivity fluctuation of P-type epitaxy is determined by comparing the electronegativity of Si,N and B,and by the analysis of CV(Capacitance-Voltage method)test fluctuation and the spreading resistivity profile(SRP).And the solution to the fluctuation is found by controlling the surface state.
作者
仲张峰
韩旭
潘文宾
葛华
尤晓杰
王银海
杨帆
ZHONG Zhangfeng;HAN Xu;PAN Wenbin;GE Hua;YOU Xiaojie;WANG Yinhai;YANG Fan(Nanjing Guosheng Electronic Co.,Ltd,Nanjing 211111,China)
出处
《电子与封装》
2020年第3期48-51,共4页
Electronics & Packaging
关键词
P型
表面态
纵向载流子分布(SRP)
电负性
P-type
surface state
spreading resistivity profile(SRP)
electronegativity
