含S,S-二氧-二苯并噻吩单元的红光磷光主体材料的合成与光电性能研究

Synthesis and Optoelctronic Properties of the Red Phosphorescent Host Material Containing Dibenzothiophene-S,S-dioxide

以咔唑与S,S-二氧-二苯并噻吩为单体制备了交替共聚物pCzFSO;系统研究了聚合物pCzFSO的热、光物理和电化学等性能,并探讨了其作为红光磷光主体材料在电致发光器件中的应用。研究结果表明:聚合物pCzFSO的热分解温度为426℃,带隙为2.77 eV,HOMO/LUMO能级为-5.65 eV/-2.88 eV;以聚合物PCzFSO为发光层制作的电致发光器件ITO/PEDOT:PSS/PVK/pCzFSO/Ba/Al发天蓝光,最大流明效率为0.80 cd/A,最大亮度为635 cd/m^2;以聚合物pCzFSO为主体材料制作的磷光电致发光器件ITO/PEDOT:PSS/PVK/pCzFSO:Ir(Piq)3/Ba/Al的最大流明效率为1.62 cd/A,最大亮度为1 990 cd/m^2。聚合物pCzFSO是一种有潜力的红光磷光主体材料。

The alternating copolymer pCzFSO was prepared by using carbazole and dibenzothiophene-S,S-dioxide as the monomers.The UV-vis, photoluminescence, thermal and electrochemical properties of the polymer pCzFSO and its application as a red phosphorescent host material in an electroluminescent device were probed. The results show that the polymer pCzFSO has the thermal decomposition temperature at 426 ℃, it has the band gap at 2.77 eV and the HOMO/LUMO energy levels at-5.65 eV/-2.88 eV. The light-emitting device whose device structure is ITO/PEDOT:PSS/PVK/pCzFSO/Ba/Al comprising the polymer pCzFSO as the light-emitting layer has a maximal luminous efficiency of 0.80 cd/A and a brightness of 635 cd/m^2;the phosphorescent photoelectroluminescent device with the device structure ITO/PEDOT:PSS/PVK/pCzFSO:Ir(Piq)3/Ba/Al comprising the polymer pCzFSO as the host material has a maximal luminous efficiency of 1.62 cd/A and a luminance of 1 990 cd/m^2. The polymer pCzFSO is a potential red phosphorescent host material.