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A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector
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摘要 We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified In As Sb quantum well, Ga Sb is replaced with Al Sb/Al Ga Sb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K. We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified In As Sb quantum well, Ga Sb is replaced with Al Sb/Al Ga Sb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K.
作者 李炫璋 孙令 鲁金蕾 刘洁 岳琛 谢莉莉 王文新 陈弘 贾海强 王禄 Xuan-Zhang Li;Ling Sun;Jin-Lei Lu;Jie Liu;Chen Yue;Li-Li Xie;Wen-Xin Wang;Hong Chen;Hai-Qiang Jia;Lu Wang(Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Detector Technology Laboratory,Beijing Institute of Space Mechanics&Electricity,Beijing 100076,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第3期468-472,共5页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China(Grant Nos.11574362,61210014,11374340,and 11474205) the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission of China(Grant No.Z151100003515001) the National Key Technology R&D Program of China(Grant No.2016YFB0400302)。
关键词 photodetector energy band calculation InAsSb/AlSb/AlGaSb quantum well interband transition photodetector energy band calculation InAsSb/AlSb/AlGaSb quantum well interband transition
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