期刊文献+

基于石墨烯的红外探测机理与器件结构研究进展 被引量:11

Recent progress on the mechanism and device structure of graphene-based infrared detectors
下载PDF
导出
摘要 石墨烯具有超高载流子迁移率、零带隙、宽波段响应等性质,是具有潜力的红外光电探测材料。通过分析石墨烯基红外探测器的发展历程,综述了石墨烯红外光电响应的机理,对石墨烯基探测器的响应度、波段、速度等性能和器件结构进行了梳理,并围绕石墨烯基探测器在材料制备、工艺兼容性等方面的挑战进行了探讨和展望。 Graphene has some unique properties, such as ultra-high carrier mobility, zero band gap,broadband response, which make it a promising material in infrared photodetection. In this review, the development history of graphene-based infrared detectors was analyzed, and the mechanism of relevant photoelectric response was summarized. The responsivity, wave-band, response speed and device structure were sorted out. The challenges of material preparation and process compatibility of graphene-based detectors were also discussed and prospected.
作者 杨旗 申钧 魏兴战 史浩飞 Yang Qi;Shen Jun;Wei Xingzhan;Shi Haofei(Center for Nanofabrication and System Integration,Chongqing Institute of Green and Intelligent Technology,Chinese Academy of Sciences,Chongqing 400714;University of Chinese Academy of Sciences,Beijing 100049)
出处 《红外与激光工程》 EI CSCD 北大核心 2020年第1期17-39,共23页 Infrared and Laser Engineering
基金 国家自然科学基金(11574308) 国家重点研发计划(2017YFE0131900)。
关键词 石墨烯 红外探测器 探测机理 graphene infrared detector detection mechanism
  • 相关文献

参考文献2

二级参考文献13

  • 1杨建荣,何进,沈寿珍,马可军,俞振中.MOCVD-Hg_(1-x)Cd_xTe/CdTe/GaAs外延材料红外吸收光谱研究[J].红外与毫米波学报,1994,13(3):191-198. 被引量:2
  • 2李世彬,吴志明,蒋亚东,李伟,廖乃镘.非晶硅微测辐射热计热学和光学分析[J].传感技术学报,2006,19(05A):1721-1724. 被引量:2
  • 3J.L. Tissot, C. Trouilleau, B. Fieque, et al. Uneooled Microbolometer Detector: Recent Developments at ULIS [J]// Proc. SPIE, 2005, 5964, 59640F.
  • 4P. W. Kruse and D. Skatrud. Uncooled Infrared Imaging Arrays and Systems [M]. Academic Press, 1997:45-119.
  • 5B. Li. Design and Simulation of An Uncooled Double-Cantilever Microbolometer with the Potential for-mK NETD [J]. Sensors and Actuators A, 2004, 112:351-359.
  • 6R. Kuschnereit, H. Fath, A. A. Kolomenskii. Mechanical and Elastic Properties of Amorphous Hydrogenated Silicon Films Studied by Broadband Surface Acoustic Wave Spectroscopy [J]. Applied Physics A, 1995, 61:269-276.
  • 7W. Senn, G. Winterling, M. Grimsditch, and M. Brodsky. The Physics of Semiconductors [M]. London: The Institute of Physics: 309-311.
  • 8D.G. Cahill, H.E. Fischer, T.K. Litsner. Thermal Conductivity of Thin Films: Measurements and Understanding[J]. J. Vac. Sci. Technol, 1989, 7, Issue 3:1259-1266.
  • 9张朝晖.ANSYS 11.0结构分析工程应用实例解析[M].北京:机械工业出版社,2008:100-168.
  • 10汤定元.红外探测器的发展现状[J].激光与红外,1991,21(1):5-11. 被引量:3

共引文献43

同被引文献102

引证文献11

二级引证文献22

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部