期刊文献+

高性能低噪声数字读出电路 被引量:9

High-performance low noise digital readout circuit
下载PDF
导出
摘要 红外焦平面的数字读出是信息化发展的必然方向,其关键技术是数字读出电路。介绍了数字读出电路的发展现状和主要架构,重点分析了时间噪声和空间噪声的来源和影响,并给出低噪声设计指导。同时对线性度、动态范围和帧频等主要性能进行了讨论,设计了两款数字读出电路。采用列级ADC数字读出架构设计了640×512数字焦平面探测器读出电路,读出噪声测试结果为150μV,互连中波探测器测试NETD为13 m K。基于数字像元读出架构设计了384×288数字焦平面探测器读出电路,互连长波探测器测试NETD小于4 m K,动态范围超过90 dB,帧频达到1000 Hz。所设计的两款读出电路有效提升了红外焦平面的灵敏度、动态范围和帧频等性能,表明数字读出电路技术对红外探测器性能的提升具有重要作用。 It′s the trend of information technology development that infrared focal plane array(FPA)outputs digital signal directly,the critical technique is the digital readout integrated circuit(ROIC).The architecture of digital ROIC was introduced in this paper after the summary of related research status.The sources and influence of temporal noise and spatial noise were analyzed in detail,then the design guide for low noise was also shown.In addition,two digital ROICs were designed based on the discussion of linearity,dynamic range and frame rate.The first ROIC was implemented with column-level ADCs,which was used for 640×512 digital FPA.The measurement results show that the readout noise of ROIC is 150μV,and the NETD with mid-wave infrared detectors is 13 m K.Digital pixel architecture is used for the second ROIC,which is connected to 384×288 long-wave infrared FPA.The measured NETD is less than 4 m K,and the dynamic range is larger than 90 d B.The max frame rate achieves1000 Hz.The two ROIC prototypes effectively improve the sensitivity,dynamic range and frame rate of infrared FPA,which confirms the advantages of digital ROIC technology to the performance development of infrared detectors.
作者 姚立斌 陈楠 Yao Libin;Chen Nan(Kunming Institute of Physics,Kunming 650223,China)
机构地区 昆明物理研究所
出处 《红外与激光工程》 EI CSCD 北大核心 2020年第1期75-84,共10页 Infrared and Laser Engineering
关键词 红外焦平面 数字读出电路 列级ADC 数字像元 低噪声 infrared FPA digital readout circuit column-level ADC digital pixel low noise
  • 相关文献

参考文献4

二级参考文献73

  • 1Hsieh C C,Wu C Y,Jih F W,et al.Focal-plane arrays and CMOS readouttechniques of infrared imaging systems[C]//IEEE Trans.on Circuits andSystems for Video Tech.,1997,7:594-605.
  • 2Rosbeck J P,Starr R E,Price S L,et al.Background and temperaturedependent current-voltage characteractics of HgCdTe photodiodes[J].Appl.Phys.,1982,53:6430-6440.
  • 3Pelgrom M J,Duinmaijer A C J,Welbers A P.Matching properties ofMOS transistors[J].IEEE Solid-State Circuits,1989,24:1433-1440.
  • 4Yoon N,Kim B,Lee H C,et al.High injection efficiency readout circuitfor low resistance infra-red detector[J].IEE Electronics Letters,1999,35(18):1507-1508.
  • 5Bluzer N,Stehlik R.Buffered direct injection of photocurrents into chargecoupled devices[J].IEEE Trans.Electron Devices,1978,25(2):160–166.
  • 6Fowler A M,Probst R G,Britt J P et al.Evaluation of an indiumantimonide hybrid focal plane array for ground-based infraredastronomy[J].Opt.Eng.,1987,26:232–240,.
  • 7Kozlowski L,Cabelli S,Kezer R,et al.10×132 CMOS/CCD readout with25 m pitch and on-chip signal processing including CDS and TDI[C]//Proc.SPIE in Infrared Readout Electronics,1992,1684:222–230.
  • 8Hsieh C-C,Wu C Y,Sun T P,et al.High-performance CMOS bufferedgate modulation input(BGMI)readout circuits for IR FPA[J].IEEESolid-State Circuits,1998,33:1188-1198.
  • 9Kulah H.,Akin T.A current mirroring integration based readout circuitfor high performance infrared FPA applications[J].IEEE Trans.Circuits Syst.II,2003,50(4):181-186.
  • 10Kang S G,Woo D H,Lee H C.Multiple integration method for a highsignal-to-noise ratio readout integrated circuit.[J].IEEE Trans.CircuitsSyst.II,2005,52(9):299-302.

共引文献34

同被引文献47

引证文献9

二级引证文献14

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部