掺杂粒子半径对Zn O基避雷器响应速度的影响——低压智能电子产品领域

Influence of doping particle radius on response speed of ZnO based arrester--in the field of low voltage intelligent electronic products

采用数据分析和曲线拟合的方法,研究掺杂粒子半径对低压智能电子产品中Zn O基避雷器响应速度的影响,得到了掺杂粒子半径对Zn O基避雷器响应速度的影响规律。研究表明,掺杂粒子半径与锌离子半径相对偏差较大(40%~50%)时,Zn O基避雷器通常具有较快的响应速度,对低压智能电子产品的保护效果最佳。

The influence of doping particle radius on the response speed of ZnO based arrester in low-voltage intelligent electronic products was researched in detail using the method of data analysis and curve fitting,and the law of the influence of doping particle radius on the response speed of ZnO based arrester was obtained.The results showed that when the relative deviation between the doped particle radius and the zinc ion radius was between 40%and 50%,the ZnO based arrester usually had a faster response speed and the best protection effect for low-voltage intelligent electronic products.