一款53~99 GHz硅基毫米波宽带低噪声放大器

A 53~99 GHz Silicon-based Millimeter Wave Broadband Low Noise Amplifier

基于65 nm CMOS工艺,设计一款频率为53~99 GHz的低噪声放大器(低噪放),低噪放采用自定义的T型匹配网络和共源共栅(Cascode)增益单元,实现了毫米波宽带和低噪声性能。仿真结果表明:低噪放的3 dB相对带宽为63.5%,最小噪声系数为3.9 dB,增益为15.75 dB,1 dB压缩点为-12.5 dBm。在CMOS工艺设计的毫米波低噪放中,该放大器拥有较大的相对带宽和较低的噪声系数。

Basing on a 65 nm CMOS technology, a low-noise amplifier(LNA) with a frequency of 53~99 GHz is designed. The LNA uses a custom T-type inductance matching network and Cascode gain unit to achieve wide-band and low-noise performance of millimeter wave. The simulation results show that the relative bandwidth of 3 dB is 63.5%, the minimum noise coefficient is 3.9 dB, the gain is 15.75 dB, and the 1 dB compression point is-12.5 dbm. In the millimeter wave LNA designed by CMOS technology, the amplifier has a larger relative bandwidth and a better noise coefficient.