摘要
Cu(In,Ga)Se2(CIGS) based multilayer heterojunction, as one of the best high efficiency thin film solar cells, has attracted great interest due to its outstanding features. However, the present studies are primarily focused on the structure optimization and modulation in order to enhance the photoelectric conversion efficiency. Here, we exploit another application of this multilayer heterostructure in photoresistance-modulated position sensitive detector by introducing lateral photoresistance effect.The lateral photoresistance measurements show that this multilayer heterojunction exhibits a wide spectral response(~330 to ~1150 nm) and excellent bipolar photoresistance performances(position sensitivity of ~63.26 X/mm and nonlinearity <4.5%), and a fast response speed(rise and fall time of ~14.46 and^14.42 ms, respectively). More importantly, based on the lateral photoresistance effect, the CIGS heterostructure may also be developed as a position-dependent resistance memory device, which can be modulated by changing laser intensity, wavelength, and bias voltage with excellent stability and repeatability, and the position resolution reaches up to 1 lm. These results can be well explained by considering the diffusion and the drift model of carriers in the CIGS multilayer heterojunction. This work provides a new approach of achieving novel photoelectric sensors and memory devices based on the traditional photovoltaic heterostructures.
CIGS异质结中存在侧向光伏效应,并且由于光照区域和非光照区域间载流子浓度的不同,会产生扩散运动及扩散流.利用该扩散载流子对外加偏压下漂移载流子的散射作用,成功实现了侧向光电阻效应,该效应可用于开发基于光电阻调控的新型光位敏探测器.该结构侧向光电阻响应光谱范围为330~1150 nm,位置灵敏度达63.26Ωmm-1,非线性度<4.5%,响应速度为14.46 ms(上升)和14.52 ms(下降).另外,考虑到不同光照位置处电阻的差异,该效应还可用于开发平面高密度光控的电阻存储器件.不同位置处电阻大小可通过外加偏压、光功率密度和光波长等条件进行有效调控,且均表现出很好的稳定性,存储密度可达1μm.最后,通过载流子扩散和漂移作用模型,对上述现象的产生和调控机理进行了解释.该研究提出了基于侧向光电阻调控的光位敏探测器和存储器的新方法,揭示了CIGS异质结的一种新应用;同时为其他材料或结构在开发光电阻为基础的探测和存储器件方面提供了新思路.
作者
Jihong Liu
Zicai Zhang
Shuang Qiao
Guangsheng Fu
Shufang Wang
Caofeng Pan
刘计红;张子才;乔双;傅广生;王淑芳;潘曹峰(Hebei Key Laboratory of Optic-Electronic Information and Materials,College of Physics Science and Technology,Hebei University,Baoding 071002,China;Beijing Key Laboratory of Micro-nano Energy and Sensor,Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 100083,China;College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China)
基金
supported by the National Natural Science Foundation of China (11704094, 11504076, 51372064, 61405040, 51622205, 61675027, 51432005, and 61505010)
the Natural Science Foundation of Hebei Province (F2019201047, F2018201198, F2017201141, and E2017201227)
the Natural Science Foundation for Distinguished Young Scholars of Hebei University (2015JQ03)。
