基于模块导通电阻的碳化硅MOSFET键合线健康状态评估方法

Method of Health State Evaluation of SiC MOSFET Bonding Wires Based on Module on State Resistance

碳化硅MOSFET(SiC MOSFET)作为第三代半导体产品中的关键器件,在越来越多的领域发挥着至关重要的作用。随着SiC MOSFET的功率越来越大和应用的领域越来越多,SiC MOSFET模块的失效问题亟需重视。首先分析了SiC MOSFET模块工作的原理,讨论了SiC MOSFET模块检测的必要性,然后提出了一种基于模块导通电阻的检测方法,该方法可在不拆开模块封装的情况下对模块键合线的健康状态实现监测。为了验证所提方法的有效性,通过剪断不同数量键合线模拟实际键合线断裂程度,测量了键合线处于不同健康状态下的模块导通电阻,同时对温度和导通电流进行了归一化处理,消除了温度对测量结果的影响。

Silicon carbide MOSFETs(SiC MOSFETs),key for the third generation of semiconductor products,play a vital role in more and more fields.With the increasing power of SiC MOSFETs and more and more application fields,the failure of SiC MOSFET modules needs urgent attention.To deal with the module failure,this paper first analyzed its working principle and discussed the necessity of module detection.Then this paper proposed a detection method based on the on-resistance of the module to monitor the health status of bonding wires without opening module package.To verify the proposed method,this paper simulated the actual bonding wire fracture state by cutting different numbers of bonding wires and measured the module on-resistance of the bonding wires in different health statuses.At the same time,the temperature and on-current were summarized to eliminate the influence of temperature on the measurement results.