化学气相沉积法制备InSe纳米片及其近红外光探测性能

Synthesis of InSe Nanoflakes with Near-infrared Photoresponse Grown by Chemical Vapor Deposition

采用化学气相沉积法在云母衬底上制备了二维In Se纳米片,研究了生长温度对二维In Se纳米片晶相、形貌、尺寸及厚度的影响.构筑了基于二维In Se纳米片的光探测器并研究了其光探测性能,结果表明,在808 nm的近红外光辐照下,其光响应度为1. 5 A/W,外量子效率为230%,可探测度为3. 1×108Jones(1 Jones=1 cm·Hz1/2·W-1),上升和衰减时间分别为0. 5和0. 8 s.

With a graphene-like two-dimensional(2D)layered structure,InSe has a great potential in the application of electronics and optoelectronic devices.Herein,2D InSe nanoflakes were synthesized via a chemical vapor deposition(CVD)method,and the effect of growth temperature on the crystalline phase,morphology,size and thickness of 2D InSe nanoflakes were studied.Photodetectors based on the as-synthesized 2D InSe nanoflakes were fabricated and its photodetection performance were studied.Under the illumination wavelength of 808 nm,the as-fabricated InSe photodetector exhibited a good near-infrared(NIR)photo-response,showing a photoresponsivity of 1.5 A/W,an external quantum efficiency of 230%and a detectivity of 3.1×10^8 Jones,accompanied with a rise and decay time of 0.5 and 0.8 s,respectively,providing a good prospects for its practical application in NIR photodetectors.